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Advance Technical Information
GigaMOSTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN180N25T
RDS(on) trr
VDSS ID25
= =
250V 155A 12.9m 200ns
miniBLOC, SOT-227 E153432
S G
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C
Maximum Ratings 250 250 20 30 164 500 40 3 20 900 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W C C C C C V~ V~ Nm/lb.in. Nm/lb.in. g
S D G = Gate S = Source D = Drain
Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal.
Features International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Easy to Mount Space Savings High Power Density
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL 1mA t = 1 minute t = 1 second
300 260 2500 3000 1.5/13 1.3/11.5 30
Mounting Torque Terminal Connection Torque
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20V, VDS = 0V VDS = VDSS, VGS = 0V VGS = 10V, ID = 60A, Note 1 TJ = 125C
Characteristic Values Min. Typ. Max. 250 2.5 5.0 200 V V nA
Applications DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications
DS100130(03/09)
50 A 3 mA 12.9 m
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXFN180N25T
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.05 VGS = 10V, VDS = 0.5 * VDSS, ID = 90A Resistive Switching Times VGS = 15V, VDS = 0.5 * VDSS, ID = 90A RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 60A, Note 1 Characteristic Values Min. Typ. Max. 100 160 28 2050 158 37 33 100 28 345 122 70 S nF pF pF ns ns ns ns nC nC nC 0.138 C/W C/W (M4 screws (4x) supplied) SOT-227B (IXFN) Outline
Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 60A, VGS = 0V, Note 1 IF = 90A, VGS = 0V -di/dt = 100A/s VR = 75V 0.77 11 Characteristic Values Min. Typ. Max. 180 720 1.3 A A V
200 ns C A
Note 1: Pulse Test, t 300s; Duty Cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXFN180N25T
Fig. 1. Output Characteristics @ 25C
180 160 140 250 7V VGS = 10V 8V 7V 350 VGS = 10V 300
Fig. 2. Extended Output Characteristics @ 25C
ID - Amperes
120
ID - Amperes
100 80 60
6V
200 150 100
6V
40 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 5V 50 5V 0 0 2 4 6 8 10 12 14 16 18
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ 125C
180 160 140 VGS = 10V 7V 2.8 2.6 2.4 6V
Fig. 4. RDS(on) Normalized to ID = 90A Value vs. Junction Temperature
VGS = 10V
ID - Amperes
120 100 80 60 40 20 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
RDS(on) - Normalized
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 I D = 90A I D = 180A
5V
3.2
3.6
4.0
4.4
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 90A Value vs. Drain Current
2.8 2.6 2.4 VGS = 10V TJ = 125C
180 160 140 120
Fig. 6. Maximum Drain Current vs. Case Temperature
RDS(on) - Normalized
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 50 100 150 200 250
ID - Amperes
TJ = 25C
100 80 60 40 20 0
300
350
-50
-25
0
25
50
75
100
125
150
ID - Amperes
TC - Degrees Centigrade
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXFN180N25T
Fig. 7. Input Admittance
200 180 240 160 TJ = 125C 25C - 40C 200 280 TJ = - 40C
Fig. 8. Transconductance
120 100 80 60 40
g f s - Siemens
140
25C
ID - Amperes
160 125C 120 80 40
20 0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 6.6 0 0 20 40 60 80 100 120 140 160 180 200
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
350 300 8 250 7 10 9 VDS = 125V I D = 90A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
VGS - Volts
TJ = 125C TJ = 25C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
200 150 100 50
6 5 4 3 2 1
0
0 0 50 100 150 200 250 300 350
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100,000 1,000
Fig. 12. Forward-Bias Safe Operating Area
f = 1 MHz
Ciss
RDS(on) Limit 25s
Capacitance - PicoFarads
10,000
Coss
I D - Amperes
100
100s
1,000
10 1ms TJ = 150C Crss TC = 25C Single Pulse 1 0 5 10 15 20 25 30 35 40 1 10 100 1000
100
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_180N25T (9E)03-23-09
IXFN180N25T
Fig. 13. Maximum Transient Thermal Impedance
1.000
Z (th)JC - C / W
0.100
0.010
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_180N25T (9E)03-23-09

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